Name: NTZS3151PT1G
Brand: ON Semiconductor
SKU: NTZS3151PT1G
Price: 0.41000 USD
Availability: InStock

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NTZS3151PT1G

Manufacturer part number:NTZS3151PT1G

Manufacturer:ON Semiconductor

Description:MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 150m Ω @ 950mA, 4.5V ±8V 458pF @ 16V 5.6nC @ 4.5V 20V SOT-563, SOT-666

Case Package:SOT-23

Datasheet:NTZS3151PT1G Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Lifecycle Status	ACTIVE (Last Updated: 3 days ago)
Factory Lead Time	9 Weeks
Mounting Type	Surface Mount
Package / Case	SOT-563, SOT-666
Surface Mount	YES
Number of Pins	6
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2006
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Resistance	150mOhm
Terminal Finish	Tin (Sn)
Subcategory	Other Transistors
Voltage - Rated DC	-20V
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	FLAT
Peak Reflow Temperature (Cel)	260
Current Rating	-950mA
Time@Peak Reflow Temperature-Max (s)	40
Pin Count	6
Number of Elements	1
Power Dissipation-Max	170mW Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	170mW
Turn On Delay Time	5 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	150m Ω @ 950mA, 4.5V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	458pF @ 16V
Current - Continuous Drain (Id) @ 25°C	860mA Ta
Gate Charge (Qg) (Max) @ Vgs	5.6nC @ 4.5V
Rise Time	12ns
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Vgs (Max)	±8V
Fall Time (Typ)	12 ns
Turn-Off Delay Time	23.7 ns
Continuous Drain Current (ID)	-950mA
Threshold Voltage	-1V
Gate to Source Voltage (Vgs)	8V
Drain to Source Breakdown Voltage	-20V
Nominal Vgs	-1 V
Height	600μm
Length	1.7mm
Width	1.3mm
REACH SVHC	No SVHC
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

NTZS3151PT1G Product Details

NTZS3151PT1G Description

NTZS3151PT1G P-Channel MOSFET is manufactured through a complex PowerTrench process. NTZS3151PT1G MOSFET is specifically designed to lower the resistance at the on-state level while still maintaining its superior quality and switching capabilities required for industrial applications. ON Semiconductor NTZS3151PT1G is utilized in Load/Power Switches, Battery Management, Cell Phones, Digital Cameras, and PDAs.