Welcome to Hotenda.com Online Store!

logo
userjoin
Home

FMMT6520TA

FMMT6520TA

FMMT6520TA

Diodes Incorporated

FMMT6520TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

FMMT6520TA Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingCut Tape (CT)
Published 2002
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - annealed
Subcategory Other Transistors
Voltage - Rated DC -350V
Max Power Dissipation330mW
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Current Rating-500mA
Frequency 50MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number FMMT6520
Number of Elements 1
Element ConfigurationSingle
Power Dissipation330mW
Transistor Application SWITCHING
Gain Bandwidth Product50MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 350V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 50mA 10V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 1V @ 5mA, 50mA
Collector Emitter Breakdown Voltage350V
Transition Frequency 50MHz
Collector Emitter Saturation Voltage-1V
Max Breakdown Voltage 350V
Collector Base Voltage (VCBO) 350V
Emitter Base Voltage (VEBO) -5V
Continuous Collector Current -500mA
Height 1mm
Length 3.05mm
Width 1.4mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:16136 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.336557$0.336557
10$0.317507$3.17507
100$0.299534$29.9534
500$0.282580$141.29
1000$0.266585$266.585

FMMT6520TA Product Details

FMMT6520TA Overview


In this device, the DC current gain is 20 @ 50mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -1V ensures maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1V @ 5mA, 50mA.A -500mA continuous collector voltage is necessary to achieve high efficiency.Keeping the emitter base voltage at -5V can result in a high level of efficiency.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -500mA.The part has a transition frequency of 50MHz.Single BJT transistor can be broken down at a voltage of 350V volts.During maximum operation, collector current can be as low as 500mA volts.

FMMT6520TA Features


the DC current gain for this device is 20 @ 50mA 10V
a collector emitter saturation voltage of -1V
the vce saturation(Max) is 1V @ 5mA, 50mA
the emitter base voltage is kept at -5V
the current rating of this device is -500mA
a transition frequency of 50MHz

FMMT6520TA Applications


There are a lot of Diodes Incorporated FMMT6520TA applications of single BJT transistors.

  • Interface
  • Muting
  • Driver
  • Inverter

Get Subscriber

Enter Your Email Address, Get the Latest News