FJPF13009H1TU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 6 @ 8A 5V.The collector emitter saturation voltage is 3V, giving you a wide variety of design options.A VCE saturation (Max) of 3V @ 3A, 12A means Ic has reached its maximum value(saturated).Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 9V.There is a transition frequency of 4MHz in the part.Maximum collector currents can be below 12A volts.
FJPF13009H1TU Features
the DC current gain for this device is 6 @ 8A 5V
a collector emitter saturation voltage of 3V
the vce saturation(Max) is 3V @ 3A, 12A
the emitter base voltage is kept at 9V
a transition frequency of 4MHz
FJPF13009H1TU Applications
There are a lot of ON Semiconductor FJPF13009H1TU applications of single BJT transistors.
- Interface
- Muting
- Driver
- Inverter
