JANTXV2N3637 Overview
In this device, the DC current gain is 100 @ 50mA 10V, which is the ratio between the base current and the collector current.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 5mA, 50mA.Emitter base voltages of 5V can achieve high levels of efficiency.The part has a transition frequency of 200MHz.A maximum collector current of 1A volts can be achieved.
JANTXV2N3637 Features
the DC current gain for this device is 100 @ 50mA 10V
the vce saturation(Max) is 600mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
a transition frequency of 200MHz
JANTXV2N3637 Applications
There are a lot of Microsemi Corporation JANTXV2N3637 applications of single BJT transistors.
- Inverter
- Muting
- Driver
- Interface
