2SCR554P5T100 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 120 @ 100mA 3V.A VCE saturation (Max) of 300mV @ 25mA, 500mA means Ic has reached its maximum value(saturated).There is a transition frequency of 300MHz in the part.A breakdown input voltage of 80V volts can be used.Single BJT transistor is possible for the collector current to fall as low as 1.5A volts at Single BJT transistors maximum.
2SCR554P5T100 Features
the DC current gain for this device is 120 @ 100mA 3V
the vce saturation(Max) is 300mV @ 25mA, 500mA
a transition frequency of 300MHz
2SCR554P5T100 Applications
There are a lot of ROHM Semiconductor 2SCR554P5T100 applications of single BJT transistors.
- Interface
- Driver
- Inverter
- Muting
