PBSS3515E,115 Overview
This device has a DC current gain of 150 @ 100mA 2V, which is the ratio between the collector current and the base current.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 250mV @ 50mA, 500mA.In this part, there is a transition frequency of 280MHz.There is a 15V maximal voltage in the device due to collector-emitter breakdown.
PBSS3515E,115 Features
the DC current gain for this device is 150 @ 100mA 2V
the vce saturation(Max) is 250mV @ 50mA, 500mA
a transition frequency of 280MHz
PBSS3515E,115 Applications
There are a lot of NXP USA Inc. PBSS3515E,115 applications of single BJT transistors.
- Interface
- Inverter
- Muting
- Driver
