Welcome to Hotenda.com Online Store!

logo
userjoin
Home

FGPF30N30DTU

FGPF30N30DTU

FGPF30N30DTU

ON Semiconductor

FGPF30N30DTU datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

SOT-23

FGPF30N30DTU Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Operating Temperature-55°C~150°C TJ
PackagingTube
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination Through Hole
Max Power Dissipation46W
Base Part Number FGPF30N30
Element ConfigurationSingle
Power Dissipation46W
Input Type Standard
Collector Emitter Voltage (VCEO) 300V
Max Collector Current 30A
Reverse Recovery Time 21 ns
Collector Emitter Breakdown Voltage300V
Vce(on) (Max) @ Vge, Ic 1.5V @ 15V, 10A
Gate Charge39nC
Current - Collector Pulsed (Icm) 80A
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusRoHS Compliant
In-Stock:3097 items

FGPF30N30DTU Product Details

FGPF30N30DTU Description

FGPF30N30DTU transistor is a MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes FGPF30N30DTU MOSFET suitable for ISM applications in which reliability and durability are essential. It has the common source configuration.

FGPF30N30DTU Features

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging

FGPF30N30DTU Applications

ISM applications

DC large signal applications

Power factor correction

Electronic lamp ballasts

Flat panel display


Get Subscriber

Enter Your Email Address, Get the Latest News