FGD3N60LSDTM-T Description
ON Semiconductor's Insulated Gate Bipolar Transistors(IGBTs) provide very low conduction losses. The device isdesigned for applica-tions where very low On-Voltage Drop isa required feature.
FGD3N60LSDTM-T Features
? High Current Capability
? Very Low Saturation Voltage : VCE(sat) = 1.2 V @ IC = 3A
? High Input Impedance
FGD3N60LSDTM-T Applications
? HID Lamp Applications
? Piezo Fuel Injection Applications
