Name: IRG4PF50WPBF
Brand: Infineon Technologies
SKU: IRG4PF50WPBF
Availability: InStock

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IRG4PF50WPBF

Manufacturer part number:IRG4PF50WPBF

Manufacturer:Infineon Technologies

Description:IRG4PF50WPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRG4PF50WPBF Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Weight	38.000013g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2004
Part Status	Last Time Buy
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Termination	Through Hole
ECCN Code	EAR99
Additional Feature	LOW CONDUCTION LOSS
Subcategory	Insulated Gate BIP Transistors
Voltage - Rated DC	600V
Max Power Dissipation	200W
Terminal Position	SINGLE
Current Rating	51A
Number of Elements	1
Element Configuration	Dual
Power Dissipation	200W
Case Connection	COLLECTOR
Input Type	Standard
Turn On Delay Time	29 ns
Transistor Application	POWER CONTROL
Rise Time	26ns
Polarity/Channel Type	N-CHANNEL
Turn-Off Delay Time	110 ns
Collector Emitter Voltage (VCEO)	2.7V
Max Collector Current	51A
JEDEC-95 Code	TO-247AC
Collector Emitter Breakdown Voltage	900V
Collector Emitter Saturation Voltage	2.25V
Turn On Time	54 ns
Test Condition	720V, 28A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.7V @ 15V, 28A
Turn Off Time-Nom (toff)	370 ns
Gate Charge	160nC
Current - Collector Pulsed (Icm)	204A
Td (on/off) @ 25°C	29ns/110ns
Switching Energy	190μJ (on), 1.06mJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6V
Fall Time-Max (tf)	220ns
Height	20.3mm
Length	15.875mm
Width	5.3mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

IRG4PF50WPBF Product Details

IRG4PF50WPBF Description

IRG4PF50WPBF belongs to the family of IGBTs that are manufactured by Infineon Technologies to minimize switching losses and conduction losses. It is optimized for use in welding and switch-mode power supply applications. It is able to deliver lower conduction and switching losses, tighter parameter distribution, and exceptional reliability. Minimal minority-carrier recombination and low on-state losses are used to achieve maximum flexibility in device application.