Name: NGTB03N60R2DT4G
Brand: ON Semiconductor
SKU: NGTB03N60R2DT4G
Availability: InStock

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NGTB03N60R2DT4G

Manufacturer part number:NGTB03N60R2DT4G

Manufacturer:ON Semiconductor

Description:NGTB03N60R2DT4G datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:NGTB03N60R2DT4G Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	27 Weeks
Lifecycle Status	ACTIVE (Last Updated: 3 days ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Operating Temperature	175°C TJ
Packaging	Tape & Reel (TR)
Published	2017
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Power Dissipation	49W
Reach Compliance Code	not_compliant
Element Configuration	Single
Input Type	Standard
Power - Max	49W
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	9A
Reverse Recovery Time	65 ns
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	1.7V
Max Breakdown Voltage	600V
Test Condition	300V, 3A, 30 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 3A
Gate Charge	17nC
Current - Collector Pulsed (Icm)	12A
Td (on/off) @ 25°C	27ns/59ns
Switching Energy	50μJ (on), 27μJ (off)
Height	2.38mm
Length	6.73mm
Width	6.22mm
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

NGTB03N60R2DT4G Product Details

NGTB03N60R2DT4G Description

NGTB03N60R2DT4G is a Single Transistor from the manufacturer of ON Semiconductor with an operating temperature of 175°C TJ. The Collector-Emitter Breakdown Voltage of NGTB03N60R2DT4G is 600V and its maximum power dissipation is 49W. NGTB03N60R2DT4G has 3 pins and it is available in TO-252-3, DPak (2 Leads + Tab), and SC-63 packaging way. The Collector-Emitter Voltage (VCEO) of NGTB03N60R2DT4G is 600V, the Reverse Recovery Time is 65 ns and its Collector-Emitter Saturation Voltage is 1.7V.