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FGP3040G2-F085

FGP3040G2-F085

FGP3040G2-F085

ON Semiconductor

FGP3040G2-F085 datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

SOT-23

FGP3040G2-F085 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 5 Weeks
Mounting Type Through Hole
Package / Case TO-220-3
Surface MountNO
Operating Temperature-55°C~175°C TJ
PackagingTube
Published 2006
Series Automotive, AEC-Q101, EcoSPARK®
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin (Sn)
Subcategory Insulated Gate BIP Transistors
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Rise Time-Max 7000ns
Input Type Logic
Power - Max 150W
Polarity/Channel Type N-CHANNEL
Voltage - Collector Emitter Breakdown (Max) 400V
Current - Collector (Ic) (Max) 41A
Power Dissipation-Max (Abs) 150W
Vce(on) (Max) @ Vge, Ic 1.25V @ 4V, 6A
Gate Charge21nC
Td (on/off) @ 25°C 900ns/4.8μs
Gate-Emitter Voltage-Max 12V
Gate-Emitter Thr Voltage-Max 2.2V
Fall Time-Max (tf) 15000ns
RoHS StatusROHS3 Compliant
In-Stock:2061 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$2.17000$2.17
10$1.94600$19.46
400$1.46875$587.5
800$1.28515$1028.12

FGP3040G2-F085 Product Details

FGP3040G2-F085 Description

FGP3040G2-F085 transistor is a MOS field-effect transistor designed to be used in signal applications. The special low thermal resistance packaging makes FGP3040G2-F085 MOSFET suitable for ISM applications in which reliability and durability are essential. It has the common source configuration.

FGP3040G2-F085 Features

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging

FGP3040G2-F085 Applications

ISM applications

DC large signal applications

Power factor correction

Electronic lamp ballasts

Flat panel display


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