IXYH25N250CHV Description
These devices, created with the help of cutting-edge IGBT technology and a patented thin-wafer design technique called XPTTM, exhibit characteristics including minimal energy loss, low tail current, and high-speed switching capabilities. These high-voltage IGBTs can be utilized in parallel, which offers cost-effective alternatives when compared to series-connected, lower-voltage devices, because of the positive temperature coefficient of their on-state voltage. As a result, the associated gate drive circuitry is reduced, the design is made simpler, and the overall system reliability is increased.
The optional co-packed fast recovery diodes are designed to create smooth switching waveforms, much less electromagnetic interference, and reduced reverse recovery times (EMI).
IXYH25N250CHV Features
Thin wafer XPT™ technology
Low on-state voltages VCE(sat)
Co-packed fast recovery diodes
Positive temperature coefficient of VCE(sat)
International standard size high-voltage packages
IXYH25N250CHV Applications
Pulser circuits
Laser and X-ray generators
High-voltage power supplies
High-voltage test equipment
Capacitor discharge circuits
AC switches
