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NGB8202NT4G

NGB8202NT4G

NGB8202NT4G

ON Semiconductor

NGB8202NT4G datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

SOT-23

NGB8202NT4G Datasheet PDF

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Technical Specifications

Parameter NameValue
TypeParameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~175°C TJ
PackagingTape & Reel (TR)
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 400V
Max Power Dissipation150W
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Current Rating20A
[email protected] Reflow Temperature-Max (s) 40
Base Part Number NGB8202
Pin Count3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Rise Time-Max 8000ns
Element ConfigurationSingle
Power Dissipation150W
Case Connection COLLECTOR
Input Type Logic
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 440V
Max Collector Current 20A
Collector Emitter Breakdown Voltage440V
Max Breakdown Voltage 440V
Turn On Time6500 ns
Test Condition 300V, 9A, 1k Ω, 5V
Vce(on) (Max) @ Vge, Ic 1.9V @ 4.5V, 20A
Turn Off Time-Nom (toff) 18500 ns
Current - Collector Pulsed (Icm) 50A
Td (on/off) @ 25°C -/5μs
Gate-Emitter Voltage-Max 15V
Gate-Emitter Thr Voltage-Max 2.1V
Fall Time-Max (tf) 14000ns
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusRoHS Compliant
Lead Free Lead Free
In-Stock:7506 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.994874$0.994874
10$0.938560$9.3856
100$0.885434$88.5434
500$0.835315$417.6575
1000$0.788033$788.033

NGB8202NT4G Product Details

NGB8202NT4G Description


NGB8202NT4G is a 400v N?Channel Ignition IGBT. This Logic Level Insulated Gate Bipolar Transistor (IGBT) NGB8202NT4G features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil driver applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. The Operating and Storage Temperature Range is between -55 and 175℃. And the transistor NGB8202NT4G is in the D2PAK package with 150 power dissipation.



NGB8202NT4G Features


Ideal for Coil?on?Plug and Driver?on?Coil Applications

Gate?Emitter ESD Protection

Temperature Compensated Gate?Collector Voltage Clamp Limits Stress Applied to Load

Integrated ESD Diode Protection

Low Threshold Voltage for Interfacing Power Loads to Logic or Microprocessor Devices

Low Saturation Voltage

High Pulsed Current Capability

Pb?Free Devices



NGB8202NT4G Applications


Ignition Systems

Automotive

Hybrid, electric & powertrain systems

Industrial

Aerospace & Defense


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