FGY60T120SQDN Description
This insulated gate bipolar transistor (IGBT)FGY60T120SQDN features a rugged and cost-effective overfield stop groove structure that provides excellent performance in demanding switching applications, while providing low-state voltage and the lowest switching loss. IGBT is ideal for UPS and solar applications. The device integrates a soft and fast co-packaged free-follow-up diode with low forward voltage.
FGY60T120SQDN Features
? Extremely Efficient Trench with Field Stop Technology
? Maximum Junction Temperature TJ = 175°C
? Low Saturation Voltage: VCE(sat) = 1.7 V (Typ.) @ IC = 60 A
? 100% of the Parts Tested for ILM (Note 1)
? Soft Fast Reverse Recovery Diode
? Optimized for High Speed Switching
? RoHS Compliant
FGY60T120SQDN Applications
? Solar Inverter, UPS
