Welcome to Hotenda.com Online Store!

logo
userjoin
Home

FGA40N65SMD

FGA40N65SMD

FGA40N65SMD

ON Semiconductor

FGA40N65SMD datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

SOT-23

FGA40N65SMD Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 6 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Contact PlatingTin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Number of Pins 3
Weight 6.401g
Transistor Element Material SILICON
Operating Temperature-55°C~175°C TJ
PackagingTube
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional FeatureLOW CONDUCTION LOSS
HTS Code8541.29.00.95
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation349W
Number of Elements 1
Rise Time-Max 28ns
Element ConfigurationSingle
Power Dissipation349W
Input Type Standard
Turn On Delay Time12 ns
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 92 ns
Collector Emitter Voltage (VCEO) 650V
Max Collector Current 80A
Reverse Recovery Time 42 ns
Collector Emitter Breakdown Voltage650V
Collector Emitter Saturation Voltage2.5V
Test Condition 400V, 40A, 6 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 40A
IGBT Type Field Stop
Gate Charge119nC
Current - Collector Pulsed (Icm) 120A
Td (on/off) @ 25°C 12ns/92ns
Switching Energy 820μJ (on), 260μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V
Fall Time-Max (tf) 17ns
Height 20.1mm
Length 16.2mm
Width 5mm
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:1822 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$4.02000$4.02
10$3.62300$36.23
450$2.84407$1279.8315
900$2.56491$2308.419

FGA40N65SMD Product Details

FGA40N65SMD Description


FGA40N65SMD is a 650v, 40A field stop IGBT made by onsemi. Using novel field stop IGBT technology, ON Semiconductor FGA40N65SMD field stop 2nd generation IGBT offers the optimum performance for solar inverter, UPS, welder, induction heating, telecom, ESS, and PFC applications where low conduction and switching losses are essential. The FGA40N65SMD operates within ambient temperatures from -55 to 175°C and with a power dissipation of 349W.



FGA40N65SMD Features


  • Positive temperature co-efficient for an easy parallel operating

  • High current capability

  • RoHS compliant

  • Low saturation voltage: VCE(sat) =1.9V(Typ.) @ IC = 40A

  • Fast switching: EOFF =6.5uJ/A

  • Tightened parameter distribution

  • Maximum junction temperature : TJ =175 °C


FGA40N65SMD Applications


  • UPS

  • Welder

  • PFC

  • Solar Inverter

  • ESS

  • Induction Heating

  • Telecom


Get Subscriber

Enter Your Email Address, Get the Latest News