STGWT20V60DF Description
This gadget is an IGBT created using an innovative, exclusive trench gates and field stops structure. The apparatus is a member of the "V" series of IGBTs, which are the ideal compromise between switching losses and conduction to maximize very high-frequency effectiveness converters. Moreover, a successful VCE (sat) temperature coefficient and extremely precise parameter distribution make simultaneous operations safer.
STGWT20V60DF Features
Maximum junction temperature: TJ = 175 °C
Very high speed switching series
Tail-less switching off
Low saturation voltage: VCE(sat) = 1.8 V (typ.) @ IC = 20 A
Tight parameters distribution
Safe paralleling
Low thermal resistance
Very fast soft recovery antiparallel diode
Lead free package
STGWT20V60DF Applications
