NGTG35N65FL2WG Description
NGTG35N65FL2WG developed by ON Semiconductor is a type of IGBT with Field Stop II Trench construction. It is able to deliver low on state voltage and minimal switching loss for demanding switching applications. Based on its specific characteristics, the NGTG35N65FL2WG IGBT is well suited for a wide range of applications, including solar inverters, UPS systems, welding, and more.
NGTG35N65FL2WG Features
5 us short?circuit capability
Low on state voltage
Minimal switching loss
Field Stop II Trench construction
TJmax = 175°C
NGTG35N65FL2WG Applications
Solar inverters
UPS systems
