STGF10H60DF Description
STGF10H60DF were created employing a cutting-edge unique trench gate fieldstop construction. These devices are part of the H series of IGBTs, which provides the best balance of conduction and switching losses for high switching frequency converter efficiency. In addition, a slightly positive VCE(sat) temperature coefficient and a very tight parameter distribution make paralleling safer.
STGF10H60DF Features
? Switching at a high rate
? A tight distribution of parameters
? Secure parallelization
? Thermal resistance is low
? Rated for short-circuiting
? Antiparallel diode with ultrafast soft recovery
STGF10H60DF Applications
? Motor management
? UPS services
? PFC (Perfluorocarbon)
