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SIA910EDJ-T1-GE3

SIA910EDJ-T1-GE3

SIA910EDJ-T1-GE3

Vishay Siliconix

Dual N-Channel 12 V 28 mOhm SMT TrenchFET Power Mosfet - PowerPAK SC-70-6L

SOT-23

SIA910EDJ-T1-GE3 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 14 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK® SC-70-6 Dual
Number of Pins 6
Weight 28.009329mg
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2015
Series TrenchFET®
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Resistance 28MOhm
Terminal Finish MATTE TIN
Subcategory FET General Purpose Powers
Max Power Dissipation7.8W
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Base Part Number SIA910E
Pin Count6
Number of Elements 2
Number of Channels 2
Element ConfigurationDual
Operating ModeENHANCEMENT MODE
Power Dissipation1.9W
Case Connection DRAIN
Turn On Delay Time10 ns
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 28m Ω @ 5.2A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 455pF @ 6V
Gate Charge (Qg) (Max) @ Vgs 16nC @ 8V
Rise Time12ns
Drain to Source Voltage (Vdss) 12V
Fall Time (Typ) 12 ns
Turn-Off Delay Time 25 ns
Continuous Drain Current (ID) 4.5A
Threshold Voltage 400mV
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage 12V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Nominal Vgs 400 mV
Radiation HardeningNo
REACH SVHC Unknown
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:10683 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$11.825040$11.82504
10$11.155698$111.55698
100$10.524244$1052.4244
500$9.928532$4964.266
1000$9.366539$9366.539

About SIA910EDJ-T1-GE3

The SIA910EDJ-T1-GE3 from Vishay Siliconix is a high-performance microcontroller designed for a wide range of embedded applications. This component features Dual N-Channel 12 V 28 mOhm SMT TrenchFET Power Mosfet - PowerPAK SC-70-6L.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the SIA910EDJ-T1-GE3, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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