FDS6875 Description
The MOSFET specified by these P-channel 2.5v isAdvanced using ONSemiconductor.The power trench process is tailor-made to minimize on-resistance while maintaining a low gate charge to achieve excellent switching performance.
These devices are ideal for portable electronic applications: load switching and power management, battery charging and protection circuits.
FDS6875 Features
-6A-20VR=0.03 @V=-4.5V
RDsiON)=0.040Ω @Vas=-2.5 V.
Low gate charge (23nC typical)
High performance trench technology for extremely low Rpsionr
High power and current handling capability.
FDS6875 Applications
portable electronic applications
load switching
power management
battery charging
protection circuits
