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STS4DPF20L

STS4DPF20L

STS4DPF20L

STMicroelectronics

STS4DPF20L datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from STMicroelectronics stock available on our website

SOT-23

STS4DPF20L Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Series STripFET™
JESD-609 Code e4
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 80mOhm
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Additional FeatureLOW THRESHOLD
Subcategory Other Transistors
Voltage - Rated DC -20V
Max Power Dissipation2W
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Current Rating-4A
[email protected] Reflow Temperature-Max (s) 30
Base Part Number STS4D
Pin Count8
Number of Elements 2
Operating ModeENHANCEMENT MODE
Power Dissipation2W
Turn On Delay Time25 ns
Power - Max 1.6W
FET Type 2 P-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 80m Ω @ 2A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1350pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 16nC @ 5V
Rise Time35ns
Fall Time (Typ) 35 ns
Turn-Off Delay Time 125 ns
Continuous Drain Current (ID) 4A
Threshold Voltage 1.6V
Gate to Source Voltage (Vgs) 16V
Drain Current-Max (Abs) (ID) 4A
Drain to Source Breakdown Voltage 20V
Pulsed Drain Current-Max (IDM) 16A
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Height 1.25mm
Length 5mm
Width 4mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:3492 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$1.065360$1.06536
10$1.005057$10.05057
100$0.948167$94.8167
500$0.894497$447.2485
1000$0.843865$843.865

STS4DPF20L Product Details

STS4DPF20L Description

This power MOSFET is the latest development of STMicroelectronics and is a unique "single feature size" strip process. The resulting transistor has extremely high packing density, low on-resistance, strong avalanche characteristics and fewer key alignment steps, so it has significant manufacturing repeatability.


STS4DPF20L Features


TYPICAL RDS(on) = 0.07 ?

STANDARD OUTLINE FOR EASY

AUTOMATED SURFACE MOUNT ASSEMBLY

LOW THRESHOLD DRIVE

STS4DPF20L Applications


BATTERY MANAGEMENT IN NOMADIC

EQUIPMENT

POWER MANAGEMENT IN CELLULAR

PHONES





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