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NTJD4152PT1G

NTJD4152PT1G

NTJD4152PT1G

ON Semiconductor

NTJD4152PT1G datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available on our website

SOT-23

NTJD4152PT1G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 11 Weeks
Lifecycle Status ACTIVE (Last Updated: 23 hours ago)
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Surface MountYES
Number of Pins 6
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2000
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Resistance 215MOhm
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC -20V
Max Power Dissipation272mW
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Current Rating-880mA
[email protected] Reflow Temperature-Max (s) 40
Base Part Number NTJD4152P
Pin Count6
Number of Elements 2
Element ConfigurationDual
Operating ModeENHANCEMENT MODE
Power Dissipation272mW
Turn On Delay Time5.8 ns
FET Type 2 P-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 260m Ω @ 880mA, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 155pF @ 20V
Gate Charge (Qg) (Max) @ Vgs 2.2nC @ 4.5V
Rise Time6.5ns
Drain to Source Voltage (Vdss) 20V
Fall Time (Typ) 6.5 ns
Turn-Off Delay Time 13.5 ns
Continuous Drain Current (ID) 880mA
Threshold Voltage -1.2V
Gate to Source Voltage (Vgs) 12V
Drain Current-Max (Abs) (ID) 0.88A
Drain to Source Breakdown Voltage -20V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Height 990.6μm
Length 2.1844mm
Width 1.3462mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:17284 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.221520$0.22152
10$0.208981$2.08981
100$0.197152$19.7152
500$0.185992$92.996
1000$0.175465$175.465

NTJD4152PT1G Product Details

NTJD4152PT1G Description


P channel MOSFET is composed of P-channel, and P-channel is composed of most hole current carriers. The gate terminal is made of N-type material. Depending on the number and type of voltage (negative or positive), determine how the transistor works and whether it is turned on or off.


NTJD4152PT1G Features


? Leading Trench Technology for Low RDS(ON) Performance

? Small Footprint Package (SC70?6 Equivalent)

? ESD Protected Gate

? NV Prefix for Automotive and Other Applications Requiring Unique

Site and Control Change Requirements; AEC?Q101 Qualified and

PPAP Capable

? These are Pb?Free Devices


NTJD4152PT1G Applications


? Load/Power Management

? Charging Circuits

? Load Switching

? Cell Phones, Computing, Digital Cameras, MP3s and PDAs





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