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FDMA1028NZ

FDMA1028NZ

FDMA1028NZ

ON Semiconductor

FDMA1028NZ datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available on our website

SOT-23

FDMA1028NZ Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 16 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-VDFN Exposed Pad
Number of Pins 6
Weight 40mg
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2009
Series PowerTrench®
JESD-609 Code e4
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
Termination SMD/SMT
ECCN Code EAR99
Resistance 68MOhm
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Subcategory FET General Purpose Power
Voltage - Rated DC 20V
Max Power Dissipation1.4W
Current Rating3.7A
Number of Elements 2
Element ConfigurationDual
Operating ModeENHANCEMENT MODE
Power Dissipation1.4W
Case Connection DRAIN
Turn On Delay Time8 ns
Power - Max 700mW
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 68m Ω @ 3.7A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 340pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 6nC @ 4.5V
Rise Time8ns
Fall Time (Typ) 8 ns
Turn-Off Delay Time 14 ns
Continuous Drain Current (ID) 3.7A
Threshold Voltage 1V
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage 20V
Dual Supply Voltage 20V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Nominal Vgs 1 V
Height 750μm
Length 2mm
Width 2mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:9122 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$10.486160$10.48616
10$9.892604$98.92604
100$9.332645$933.2645
500$8.804382$4402.191
1000$8.306021$8306.021

FDMA1028NZ Product Details

FDMA1028NZ Description


The device is a single package solution specially designed to meet the dual switching requirements of cellular phones and other ultra-portable applications. It has two independent N-channel MOSFET with low on-resistance and minimum on-loss. The MicroFET 2x2 package provides excellent thermal performance for its physical size and is ideal for linear mode applications.


FDMA1028NZ Features

3.7 A, 20V

RDS(ON) = 68 mΩ @ VGS = 4.5V

RDS(ON) = 86 mΩ @ VGS = 2.5V

Low profile – 0.8 mm maximum – in the new packageMicroFET 2x2 mm

HBM ESD protection level > 2kV (Note 3)

RoHS Compliant

Free from halogenated compounds and antimonyoxides


FDMA1028NZ Applications

This product is general usage and suitable for many different applications.





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