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FDN371N

  • FDN371N - FDN371N datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
  • FDN371N - FDN371N datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

FDN371N

FDN371N

ON Semiconductor

FDN371N datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

FDN371N Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2008
Series PowerTrench®
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory FET General Purpose Power
Voltage - Rated DC 20V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal FormGULL WING
Current Rating2.5A
Number of Elements 1
Power Dissipation-Max 500mW Ta
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation500mW
Turn On Delay Time7 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 50m Ω @ 2.5A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 815pF @ 10V
Current - Continuous Drain (Id) @ 25°C 2.5A Ta
Gate Charge (Qg) (Max) @ Vgs 10.7nC @ 4.5V
Rise Time9ns
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 9 ns
Turn-Off Delay Time 17 ns
Continuous Drain Current (ID) 2.5A
Gate to Source Voltage (Vgs) 12V
Drain-source On Resistance-Max 0.05Ohm
Drain to Source Breakdown Voltage 20V
Radiation HardeningNo
RoHS StatusRoHS Compliant
Lead Free Lead Free
In-Stock:3261 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.048263$0.048263
500$0.035487$17.7435
1000$0.029572$29.572
2000$0.027131$54.262
5000$0.025356$126.78
10000$0.023587$235.87
15000$0.022811$342.165
50000$0.022430$1121.5

FDN371N Product Details

FDN371N Description


The FDN371N 20V N-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management applications.



FDN371N Features


  • 2.5 A, 20 V. RDS(ON) = 50 mW @ VGS = 4.5 V

    RDS(ON) = 60 mW @ VGS = 2.5 V

  • Low gate charge (7.6 nC typical)

  • Fast switching speed

  • High-performance trench technology for extremely low RDS(ON)



FDN371N Applications


  • Load switch

  • Battery protection

  • Power management


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