BSC022N03S

Name: BSC022N03S
Brand: Infineon Technologies
SKU: BSC022N03S
Availability: InStock

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BSC022N03S

Manufacturer part number:BSC022N03S

Manufacturer:Infineon Technologies

Description:BSC022N03S datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:BSC022N03S Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2004
Series	OptiMOS™
JESD-609 Code	e0
Part Status	Discontinued
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Terminal Finish	Tin/Lead (Sn/Pb)
Additional Feature	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Subcategory	FET General Purpose Power
Voltage - Rated DC	30V
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	NO LEAD
Peak Reflow Temperature (Cel)	235
Current Rating	50A
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	8
JESD-30 Code	R-PDSO-N5
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	2.8W Ta 104W Tc
Operating Mode	ENHANCEMENT MODE
Turn On Delay Time	9.7 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	2.2m Ω @ 50A, 10V
Vgs(th) (Max) @ Id	2V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds	7490pF @ 15V
Current - Continuous Drain (Id) @ 25°C	28A Ta 100A Tc
Gate Charge (Qg) (Max) @ Vgs	58nC @ 5V
Rise Time	9ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	7 ns
Turn-Off Delay Time	42 ns
Continuous Drain Current (ID)	50A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.0033Ohm
Pulsed Drain Current-Max (IDM)	200A
RoHS Status	Non-RoHS Compliant
Lead Free	Contains Lead