NTD60N02R datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
NTD60N02R Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins
3
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Published
2004
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
HTS Code
8541.29.00.95
Voltage - Rated DC
25V
Technology
MOSFET (Metal Oxide)
Reach Compliance Code
not_compliant
Current Rating
62A
Pin Count
3
Power Dissipation-Max
1.25W Ta 58W Tc
Element Configuration
Single
Power Dissipation
1.87W
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
10.5m Ω @ 20A, 10V
Vgs(th) (Max) @ Id
2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1330pF @ 20V
Current - Continuous Drain (Id) @ 25°C
8.5A Ta 32A Tc
Gate Charge (Qg) (Max) @ Vgs
14nC @ 4.5V
Rise Time
33ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
33 ns
Turn-Off Delay Time
19 ns
Continuous Drain Current (ID)
32A
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
25V
RoHS Status
Non-RoHS Compliant
Lead Free
Contains Lead
In-Stock:3007 items
NTD60N02R Product Details
NTD60N02R Description
NTD60N02R is an N-channel Power MOSFET transistor from the manufacturer ON Semiconductor with a voltage of 25V. The operating temperature of the NTD60N02R is -55°C~175°C TJ and its maximum power dissipation is 1.87W. NTD60N02R has 3 pins and it is available in Tube packaging way. The Continuous Drain Current (ID) of the NTD60N02R is 32A.
NTD60N02R Features
Planar HD3e Process for Fast Switching Performance
Low RDS(on) to Minimize Conduction Loss
Low Ciss to Minimize Driver Loss
Low Gate Charge
Optimized for High Side Switching Requirements in
High?Efficiency DC?DC Converters
Pb?Free Packages are Available
NTD60N02R Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
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