Name: FDMC8360L
Brand: ON Semiconductor
SKU: FDMC8360L
Price: 3.12000 USD
Availability: InStock

new-10%

FDMC8360L

Manufacturer part number:FDMC8360L

Manufacturer:ON Semiconductor

Description:N-Channel Tape & Reel (TR) 2.1m Ω @ 27A, 10V ±20V 5795pF @ 20V 80nC @ 10V 8-PowerWDFN

Case Package:SOT-23

Datasheet:FDMC8360L Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Lifecycle Status	ACTIVE (Last Updated: 1 week ago)
Factory Lead Time	20 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerWDFN
Number of Pins	8
Weight	152.7mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	PowerTrench®
Published	2017
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Terminal Position	DUAL
JESD-30 Code	S-PDSO-N5
Number of Elements	1
Power Dissipation-Max	2.3W Ta 54W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	54W
Case Connection	DRAIN
Turn On Delay Time	15 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	2.1m Ω @ 27A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	5795pF @ 20V
Current - Continuous Drain (Id) @ 25°C	27A Ta 80A Tc
Gate Charge (Qg) (Max) @ Vgs	80nC @ 10V
Rise Time	14ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	11 ns
Turn-Off Delay Time	38 ns
Continuous Drain Current (ID)	80A
JEDEC-95 Code	MO-240BA
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	27A
Drain to Source Breakdown Voltage	40V
Pulsed Drain Current-Max (IDM)	240A
Avalanche Energy Rating (Eas)	294 mJ
Height	750μm
Length	3.4mm
Width	3.4mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant

FDMC8360L Product Details

FDMC8360L Description

FDMC8360L is an N-channel Power MOSFET transistor from the manufacturer ON Semiconductor with a drain to source voltage of 40V. The operating temperature of FDMC8360L is -55??C~150??C TJ and its maximum power dissipation is 2.3W Ta. The Shielded Gate technology combined with a cutting-edge PowerTrench? technique is used to create this N-Channel MOSFET. This procedure maintains excellent switching performance while being tuned for the on-state resistance.