STW70N60DM6 Description
These MDmesh DM6 fast-recovery diode series high-voltage N-channel Power MOSFETs. In comparison to the previous MDmesh fast generation, DM6 offers one of the most efficient switching behaviors on the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters, along with very low recovery charge (Qrr), recovery time (trr), and excellent improvements in RDS(on) per area.
STW70N60DM6 Features
Fast-recovery body diode
Lower RDS(on) per area vs previous generation
Low gate charge, input capacitance and resistance
100% avalanche tested
Extremely high dv/dt ruggedness
Zener-protected
STW70N60DM6 Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
