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IXFN100N65X2

IXFN100N65X2

IXFN100N65X2

IXYS

MOSFET N-CH

SOT-23

IXFN100N65X2 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 19 Weeks
Mounting Type Chassis Mount
Package / Case SOT-227-4, miniBLOC
Operating Temperature-55°C~150°C TJ
PackagingTube
Series HiPerFET™
Part StatusActive
Technology MOSFET (Metal Oxide)
Reach Compliance Code compliant
Power Dissipation-Max 595W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 30m Ω @ 50A, 10V
Vgs(th) (Max) @ Id 5V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds 10800pF @ 25V
Current - Continuous Drain (Id) @ 25°C 78A Tc
Gate Charge (Qg) (Max) @ Vgs 183nC @ 10V
Drain to Source Voltage (Vdss) 650V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
In-Stock:221 items

Pricing & Ordering

QuantityUnit PriceExt. Price
10$21.53400$215.34

About IXFN100N65X2

The IXFN100N65X2 from IXYS is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IXFN100N65X2, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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