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IXTH52N65X

IXTH52N65X

IXTH52N65X

IXYS

MOSFET N-CH 650V 52A TO-247

SOT-23

IXTH52N65X Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 15 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Operating Temperature-55°C~150°C TJ
PackagingTube
Published 2015
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 660W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 68m Ω @ 26A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4350pF @ 25V
Current - Continuous Drain (Id) @ 25°C 52A Tc
Gate Charge (Qg) (Max) @ Vgs 113nC @ 10V
Drain to Source Voltage (Vdss) 650V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Continuous Drain Current (ID) 52A
RoHS StatusROHS3 Compliant
In-Stock:611 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.003893$0.003893
500$0.002862$1.431
1000$0.002385$2.385
2000$0.002188$4.376
5000$0.002045$10.225
10000$0.001903$19.03
15000$0.001840$27.6
50000$0.001809$90.45

About IXTH52N65X

The IXTH52N65X from IXYS is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 650V 52A TO-247.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IXTH52N65X, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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