FDG8842CZ Description
These Numbp channel logic level enhanced mode field effect transistors are manufactured using on Semiconductor's proprietary high cell density DMOS technology. This very high-density process is specially tailored to minimize on-resistance. The device is specially designed for low-voltage applications as a substitute for bipolar digital transistors and small-signal MOSFET. Because there is no need for bias resistors, this dual-digital FET can replace several different digital transistors with different bias resistance values.
FDG8842CZ Features
Q1: N-Channel
Max rDS(on) = 0.4Ω at VGS = 4.5V, ID = 0.75A
Max rDS(on) = 0.5Ω at VGS = 2.7V, ID = 0.67A
Q2: P-Channel
Max rDS(on) = 1.1Ω at VGS = –4.5V, ID = –0.41A
Max rDS(on) = 1.5Ω at VGS = –2.7V, ID = –0.25A
Very low level gate drive requirements allowing direct
operation in 3V circuits(VGS(th) <1.5V)
Very small package outline SC70-6
RoHS Compliant
FDG8842CZ Applications
low-voltage applications
