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FDD3672

FDD3672

FDD3672

ON Semiconductor

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 28m Ω @ 44A, 10V ±20V 1710pF @ 25V 36nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63

SOT-23

FDD3672 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Factory Lead Time 8 Weeks
Contact PlatingTin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Weight 260.37mg
Transistor Element Material SILICON
Operating Temperature-55°C~175°C TJ
PackagingTape & Reel (TR)
Series UltraFET™
Published 2002
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Termination SMD/SMT
ECCN Code EAR99
Resistance 28MOhm
Subcategory FET General Purpose Power
Voltage - Rated DC 100V
Technology MOSFET (Metal Oxide)
Terminal FormGULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Current Rating44A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Qualification StatusNot Qualified
Number of Elements 1
Power Dissipation-Max 135W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation135W
Case Connection DRAIN
Turn On Delay Time11 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 28m Ω @ 44A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1710pF @ 25V
Current - Continuous Drain (Id) @ 25°C 6.5A Ta 44A Tc
Gate Charge (Qg) (Max) @ Vgs 36nC @ 10V
Rise Time59ns
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Fall Time (Typ) 44 ns
Turn-Off Delay Time 26 ns
Continuous Drain Current (ID) 44A
Threshold Voltage 4V
JEDEC-95 Code TO-252AA
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 6.5A
Drain to Source Breakdown Voltage 100V
Dual Supply Voltage 100V
Nominal Vgs 4 V
Height 2.39mm
Length 6.73mm
Width 5.59mm
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:3944 items

Pricing & Ordering

QuantityUnit PriceExt. Price

FDD3672 Product Details

FDD3672 Overview


The maximum input capacitance of this device is 1710pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 44A.When VGS=100V, and ID flows to VDS at 100VVDS, the drain-source breakdown voltage is 100V in this device.As shown in the table below, the drain current of this device is 6.5A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 26 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 11 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is 4V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.Using drive voltage (6V 10V), this device helps reduce its power consumption.

FDD3672 Features


a continuous drain current (ID) of 44A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 26 ns
a threshold voltage of 4V


FDD3672 Applications


There are a lot of ON Semiconductor
FDD3672 applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,

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