FDMC86262P datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
FDMC86262P Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Lifecycle Status
ACTIVE (Last Updated: 1 week ago)
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-PowerWDFN
Number of Pins
8
Weight
165.33333mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2006
Series
PowerTrench®
JESD-609 Code
e4
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
5
ECCN Code
EAR99
Terminal Finish
Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
NO LEAD
Peak Reflow Temperature (Cel)
260
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
S-PDSO-N5
Number of Elements
1
Power Dissipation-Max
2.3W Ta 40W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
FET Type
P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
307m Ω @ 2A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
885pF @ 75V
Current - Continuous Drain (Id) @ 25°C
2A Ta 8.4A Tc
Gate Charge (Qg) (Max) @ Vgs
13nC @ 10V
Drain to Source Voltage (Vdss)
150V
Drive Voltage (Max Rds On,Min Rds On)
6V 10V
Vgs (Max)
±25V
Continuous Drain Current (ID)
8.4A
Drain-source On Resistance-Max
0.307Ohm
Pulsed Drain Current-Max (IDM)
35A
DS Breakdown Voltage-Min
150V
Avalanche Energy Rating (Eas)
37 mJ
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
In-Stock:6139 items
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Unit Price
Ext. Price
FDMC86262P Product Details
FDMC86262P Description
FDMC86262P is a -150v P-Channel PowerTrench? MOSFET. This P-Channel MOSFET FDMC86262P is produced using Fairchild Semiconductor's advanced PowerTrench? technology. This very high-density process is specially tailored to minimize on-state resistance and optimized for superior switching performance. The Operating and Storage Temperature Range is between -55 and 150℃. And the Transistor FDMC86262P is in the Power-33-8 package with 40W power dissipation.
FDMC86262P Features
Max rDs(on)=307 mΩ at VGs=-10 V, lD=-2 A
Max rDs(on)= 356 mΩ at VGs=-6 V, lD=-1.8 A
Very Low rDs(on) Mid Voltage P-Channel Silicon Technology Optimised for Low Qg
Optimized for Fast Switching Applications as well as Load Switch Applications
100% UIL Tested
RoHS Compliant
FDMC86262P Applications
Active Clamp Switch
Load Switch
USB Type C High-end Smartphones & Tablet PCs
Point-of-Load Power Distribution in 5 V, 12 V, 15 V, and 20 V systems
