NDS332P Description
These P-Channel logic level enhancement mode power field effect transistors are produced using ON Semiconductor's
proprietary, high cell density, DMOS technology. This very high-density process is specially tailored to minimize on-state
resistance. These devices are particularly suited for low voltage applications such as notebook computer power
management, portable electronics, and other battery-powered circuits where fast high-side switching and low
in-line power loss are needed in a very small outline surface mount package.
NDS332P Features
-1 A, -20 V, RDS(ON) = 0.41 W @ VGS= -2.7 V
RDS(ON) = 0.3 W @ VGS = -4.5 V.
Very low-level gate drive requirements allow direct
operation in 3V circuits. VGS(th) < 1.0V.
Proprietary package design using the copper lead frame for
superior thermal and electrical capabilities.
High-density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current
capability.
Compact industry-standard SOT-23 surface Mount
package
