IPB110P06LMATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
SOT-23
IPB110P06LMATMA1 Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
13 Weeks
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Series
OptiMOS™
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Technology
MOSFET (Metal Oxide)
Power Dissipation-Max
300W Tc
FET Type
P-Channel
Rds On (Max) @ Id, Vgs
11m Ω @ 100A, 10V
Vgs(th) (Max) @ Id
2V @ 5.55mA
Input Capacitance (Ciss) (Max) @ Vds
8500pF @ 30V
Current - Continuous Drain (Id) @ 25°C
100A Tc
Gate Charge (Qg) (Max) @ Vgs
281nC @ 10V
Drain to Source Voltage (Vdss)
60V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
RoHS Status
ROHS3 Compliant
In-Stock:1148 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$5.93000
$5.93
500
$5.8707
$2935.35
1000
$5.8114
$5811.4
1500
$5.7521
$8628.15
2000
$5.6928
$11385.6
2500
$5.6335
$14083.75
IPB110P06LMATMA1 Product Details
IPB110P06LMATMA1 Description
IPB110P06LMATMA1 is a P-channel -60V OptiMOS? Power Transistor at the normal and logic levels. The main advantage of a P-channel device is the reduction of design complexity in medium and low-power applications. Its easy interface to MCU, fast switching as well as avalanche ruggedness makes it suitable for high-quality demanding applications. It is available in normal and logic levels featuring a wide RDS(on) range and improves efficiency at low loads due to low Qg.
IPB110P06LMATMA1 Features
P-Channel
Very low on-resistance RDS(on)@VGS=4.5V
100%avalanchetested
LogicLevel
Enhancement mode
Pb-free lead plating; RoHS compliant
IPB110P06LMATMA1 Applications
Battery
Consumer
Industrial automation
Industrial drives
Load switch
Reverse polarity protection applications
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