Name: SI4427BDY-T1-E3
Brand: Vishay Siliconix
SKU: SI4427BDY-T1-E3
Price: 1.73000 USD
Availability: InStock

new-10%

SI4427BDY-T1-E3

Manufacturer part number:SI4427BDY-T1-E3

Manufacturer:Vishay Siliconix

Description:SI4427BDY-T1-E3 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Vishay Siliconix stock available on our website

Case Package:SOT-23

Datasheet:SI4427BDY-T1-E3 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Weight	186.993455mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2016
Series	TrenchFET®
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Resistance	10.5mOhm
Terminal Finish	MATTE TIN
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	8
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	1.5W Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.5W
Turn On Delay Time	12 ns
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	10.5m Ω @ 12.6A, 10V
Vgs(th) (Max) @ Id	1.4V @ 250μA
Current - Continuous Drain (Id) @ 25°C	9.7A Ta
Gate Charge (Qg) (Max) @ Vgs	70nC @ 4.5V
Rise Time	15ns
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	2.5V 10V
Vgs (Max)	±12V
Fall Time (Typ)	15 ns
Turn-Off Delay Time	242 ns
Continuous Drain Current (ID)	-12.6A
Threshold Voltage	-1.4V
Gate to Source Voltage (Vgs)	12V
Drain Current-Max (Abs) (ID)	9.7A
Drain to Source Breakdown Voltage	-30V
Height	1.55mm
Length	5mm
Width	4mm
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

SI4427BDY-T1-E3 Product Details

SI4427BDY-T1-E3 Description

SI4427BDY-T1-E3 is a 30V P-Channel MOSFET. A P-Channel MOSFET is a type of MOSFET in which the channel of the MOSFET is composed of a majority of holes as current carriers. When the MOSFET is activated and on, most of the current flowing is holes moving through the channels. The Operating and Storage Temperature Range is between -55 and +150℃. And the LED SI4427BDY-T1-E3 in the SOIC-8 package with 1.5W Power Dissipation.