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BF422ZL1

BF422ZL1

BF422ZL1

ON Semiconductor

BF422ZL1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

BF422ZL1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 week ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Box (TB)
Published 2005
JESD-609 Code e0
Pbfree Code no
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Additional FeatureEUROPEAN PART NUMBER
HTS Code8541.21.00.95
Subcategory Other Transistors
Voltage - Rated DC 250V
Max Power Dissipation830mW
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 240
Reach Compliance Code not_compliant
Current Rating50mA
[email protected] Reflow Temperature-Max (s) 30
Base Part Number BF422
Pin Count3
Qualification StatusNot Qualified
Number of Elements 1
Element ConfigurationSingle
Transistor Application AMPLIFIER
Gain Bandwidth Product60MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 500mV
Max Collector Current 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 25mA 20V
Vce Saturation (Max) @ Ib, Ic 500mV @ 2mA, 20mA
Collector Emitter Breakdown Voltage250V
Transition Frequency 60MHz
Collector Emitter Saturation Voltage500mV
Collector Base Voltage (VCBO) 250V
Emitter Base Voltage (VEBO) 5V
hFE Min 50
RoHS StatusNon-RoHS Compliant
Lead Free Contains Lead
In-Stock:2422 items

BF422ZL1 Product Details

BF422ZL1 Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 50 @ 25mA 20V.A collector emitter saturation voltage of 500mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).With the emitter base voltage set at 5V, an efficient operation can be achieved.The current rating of this fuse is 50mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.As a result, the part has a transition frequency of 60MHz.Single BJT transistor is possible for the collector current to fall as low as 50mA volts at Single BJT transistors maximum.

BF422ZL1 Features


the DC current gain for this device is 50 @ 25mA 20V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 5V
the current rating of this device is 50mA
a transition frequency of 60MHz

BF422ZL1 Applications


There are a lot of ON Semiconductor BF422ZL1 applications of single BJT transistors.

  • Muting
  • Inverter
  • Driver
  • Interface

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