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BD159G

BD159G

BD159G

ON Semiconductor

BD159G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

BD159G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 6 days ago)
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Surface MountNO
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-65°C~150°C TJ
PackagingBulk
Published 2003
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional FeatureHIGH RELIABILITY
Subcategory Other Transistors
Voltage - Rated DC 350V
Max Power Dissipation20W
Peak Reflow Temperature (Cel) 260
Current Rating500mA
[email protected] Reflow Temperature-Max (s) 40
Base Part Number BD159
Pin Count3
Number of Elements 1
Element ConfigurationSingle
Power Dissipation20W
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 350V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 50mA 10V
Current - Collector Cutoff (Max) 100μA ICBO
Collector Emitter Breakdown Voltage100V
Transition Frequency 6MHz
Max Breakdown Voltage 350V
Collector Base Voltage (VCBO) 375V
Emitter Base Voltage (VEBO) 5V
hFE Min 30
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:4107 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.56000$0.56
10$0.47700$4.77
100$0.35600$35.6
500$0.27974$139.87

BD159G Product Details

BD159G Overview


In this device, the DC current gain is 30 @ 50mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 500mA.A transition frequency of 6MHz is present in the part.Breakdown input voltage is 350V volts.During maximum operation, collector current can be as low as 500mA volts.

BD159G Features


the DC current gain for this device is 30 @ 50mA 10V
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
a transition frequency of 6MHz

BD159G Applications


There are a lot of ON Semiconductor BD159G applications of single BJT transistors.

  • Driver
  • Inverter
  • Interface
  • Muting

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