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BC327-25ZL1G

BC327-25ZL1G

BC327-25ZL1G

ON Semiconductor

BC327-25ZL1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

BC327-25ZL1G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Lifecycle Status LAST SHIPMENTS (Last Updated: 4 days ago)
Contact PlatingCopper, Silver, Tin
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Surface MountNO
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Box (TB)
Published 2007
JESD-609 Code e1
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional FeatureEUROPEAN PART NUMBER
Subcategory Other Transistors
Voltage - Rated DC -45V
Max Power Dissipation625mW
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 260
Current Rating-800mA
Frequency 260MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number BC327
Pin Count3
Number of Elements 1
Element ConfigurationSingle
Power Dissipation1.5W
Power - Max 625mW
Transistor Application AMPLIFIER
Gain Bandwidth Product260MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 45V
Max Collector Current 800mA
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 100mA 1V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage45V
Transition Frequency 260MHz
Collector Emitter Saturation Voltage-700mV
Max Breakdown Voltage 45V
Collector Base Voltage (VCBO) -50V
Emitter Base Voltage (VEBO) 5V
hFE Min 160
Height 5.33mm
Length 5.2mm
Width 4.19mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusRoHS Compliant
Lead Free Lead Free
In-Stock:4228 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.267481$0.267481
10$0.252341$2.52341
100$0.238057$23.8057
500$0.224582$112.291
1000$0.211869$211.869

BC327-25ZL1G Product Details

BC327-25ZL1G Overview


This device has a DC current gain of 160 @ 100mA 1V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of -700mV ensures maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 700mV @ 50mA, 500mA.Emitter base voltages of 5V can achieve high levels of efficiency.Its current rating is -800mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.260MHz is present in the transition frequency.Single BJT transistor can take a breakdown input voltage of 45V volts.During maximum operation, collector current can be as low as 800mA volts.

BC327-25ZL1G Features


the DC current gain for this device is 160 @ 100mA 1V
a collector emitter saturation voltage of -700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is -800mA
a transition frequency of 260MHz

BC327-25ZL1G Applications


There are a lot of ON Semiconductor BC327-25ZL1G applications of single BJT transistors.

  • Inverter
  • Interface
  • Driver
  • Muting

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