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BD678AS

BD678AS

BD678AS

ON Semiconductor

BD678AS datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

BD678AS Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 6 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 2 days ago)
Contact PlatingTin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Weight 761mg
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingBulk
Published 2002
JESD-609 Code e3
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC -60V
Max Power Dissipation14W
Current Rating-4A
Base Part Number BD678
JESD-30 Code R-PSFM-T3
Number of Elements 1
Polarity PNP
Element ConfigurationSingle
Power - Max 14W
Transistor Application SWITCHING
Transistor Type PNP - Darlington
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 4A
DC Current Gain (hFE) (Min) @ Ic, Vce 750 @ 2A 3V
Current - Collector Cutoff (Max) 500μA
Vce Saturation (Max) @ Ib, Ic 2.8V @ 40mA, 2A
Collector Emitter Breakdown Voltage60V
Collector Emitter Saturation Voltage2.8V
Collector Base Voltage (VCBO) -60V
Emitter Base Voltage (VEBO) -5V
hFE Min 750
Continuous Collector Current -4A
Height 11mm
Length 8mm
Width 3.25mm
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:25230 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.64000$0.64
10$0.56400$5.64
100$0.43250$43.25
500$0.34188$170.94

BD678AS Product Details

BD678AS Overview


This device has a DC current gain of 750 @ 2A 3V, which is the ratio between the base current and the collector current.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 2.8V, which allows maximum flexibilSingle BJT transistory in design.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 2.8V @ 40mA, 2A.For high efficiency, the continuous collector voltage must be kept at -4A.A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.A maximum collector current of 4A volts can be achieved.

BD678AS Features


the DC current gain for this device is 750 @ 2A 3V
a collector emitter saturation voltage of 2.8V
the vce saturation(Max) is 2.8V @ 40mA, 2A
the emitter base voltage is kept at -5V
the current rating of this device is -4A

BD678AS Applications


There are a lot of ON Semiconductor BD678AS applications of single BJT transistors.

  • Driver
  • Interface
  • Muting
  • Inverter

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