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MPSA63G

MPSA63G

MPSA63G

ON Semiconductor

MPSA63G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

MPSA63G Datasheet PDF

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Technical Specifications

Parameter NameValue
TypeParameter
Lifecycle Status OBSOLETE (Last Updated: 6 days ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingBulk
Published 2007
JESD-609 Code e1
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory Other Transistors
Voltage - Rated DC -30V
Max Power Dissipation625mW
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating-500mA
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number MPSA63
Pin Count3
Qualification StatusNot Qualified
Number of Elements 1
Polarity PNP
Element ConfigurationSingle
Power Dissipation625mW
Transistor Application SWITCHING
Transistor Type PNP - Darlington
Collector Emitter Voltage (VCEO) 30V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 10000 @ 100mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 1.5V @ 100μA, 100mA
Collector Emitter Breakdown Voltage30V
Transition Frequency 125MHz
Collector Emitter Saturation Voltage1.5V
Frequency - Transition 125MHz
Collector Base Voltage (VCBO) 30V
Emitter Base Voltage (VEBO) 10V
Continuous Collector Current -500mA
RoHS StatusRoHS Compliant
Lead Free Lead Free
In-Stock:2970 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.123867$0.123867
10$0.116855$1.16855
100$0.110241$11.0241
500$0.104001$52.0005
1000$0.098114$98.114

MPSA63G Product Details

MPSA63G Overview


This device has a DC current gain of 10000 @ 100mA 5V, which is the ratio between the base current and the collector current.The collector emitter saturation voltage is 1.5V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1.5V @ 100μA, 100mA.A constant collector voltage of -500mA is necessary for high efficiency.Keeping the emitter base voltage at 10V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-500mA).In this part, there is a transition frequency of 125MHz.A maximum collector current of 500mA volts is possible.

MPSA63G Features


the DC current gain for this device is 10000 @ 100mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is -500mA
a transition frequency of 125MHz

MPSA63G Applications


There are a lot of ON Semiconductor MPSA63G applications of single BJT transistors.

  • Driver
  • Muting
  • Interface
  • Inverter

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