BD13616S Overview
In this device, the DC current gain is 100 @ 150mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.The collector emitter saturation voltage is -500mV, which allows for maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 50mA, 500mA.With the emitter base voltage set at -5V, an efficient operation can be achieved.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -1.5A.As a result, the part has a transition frequency of 75MHz.Maximum collector currents can be below 1.5A volts.
BD13616S Features
the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -1.5A
a transition frequency of 75MHz
BD13616S Applications
There are a lot of ON Semiconductor BD13616S applications of single BJT transistors.
- Inverter
- Muting
- Driver
- Interface
