BDX34CG Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 750 @ 3A 3V.With a collector emitter saturation voltage of 2.5V, it offers maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 2.5V @ 6mA, 3A.The base voltage of the emitter can be kept at 5V to achieve high efficiency.This device has a current rating of -10A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.In this part, there is a transition frequency of 120MHz.Single BJT transistor can be broken down at a voltage of 100V volts.In extreme cases, the collector current can be as low as 10A volts.
BDX34CG Features
the DC current gain for this device is 750 @ 3A 3V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 6mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is -10A
a transition frequency of 120MHz
BDX34CG Applications
There are a lot of ON Semiconductor BDX34CG applications of single BJT transistors.
- Driver
- Inverter
- Muting
- Interface
