BCP5416H6327XTSA1 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 150mA 2V.The collector emitter saturation voltage is 500mV, giving you a wide variety of design options.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 50mA, 500mA.An emitter's base voltage can be kept at 5V to gain high efficiency.A maximum collector current of 1A volts is possible.
BCP5416H6327XTSA1 Features
the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
BCP5416H6327XTSA1 Applications
There are a lot of Infineon Technologies BCP5416H6327XTSA1 applications of single BJT transistors.
- Muting
- Interface
- Driver
- Inverter
