SBC817-16LT3G Overview
In this device, the DC current gain is 100 @ 100mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.The collector emitter saturation voltage is 700mV, giving you a wide variety of design options.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 700mV @ 50mA, 500mA.Continuous collector voltages of 500mA should be maintained to achieve high efficiency.If the emitter base voltage is kept at 45V, a high level of efficiency can be achieved.The part has a transition frequency of 100MHz.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.
SBC817-16LT3G Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 45V
a transition frequency of 100MHz
SBC817-16LT3G Applications
There are a lot of ON Semiconductor SBC817-16LT3G applications of single BJT transistors.
- Inverter
- Driver
- Interface
- Muting
