BC858CLT3G Overview
This device has a DC current gain of 420 @ 2mA 5V, which is the ratio between the collector current and the base current.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -650mV, which allows maximum flexibilSingle BJT transistory in design.A VCE saturation (Max) of 650mV @ 5mA, 100mA means Ic has reached its maximum value(saturated).With the emitter base voltage set at 5V, an efficient operation can be achieved.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -100mA.Parts of this part have transition frequencies of 100MHz.When collector current reaches its maximum, it can reach 100mA volts.
BC858CLT3G Features
the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of -650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
a transition frequency of 100MHz
BC858CLT3G Applications
There are a lot of ON Semiconductor BC858CLT3G applications of single BJT transistors.
- Inverter
- Driver
- Interface
- Muting
