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BSR30F

BSR30F

BSR30F

Nexperia USA Inc.

BSR30F datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

BSR30F Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 4 Weeks
Mounting Type Surface Mount
Package / Case TO-243AA
Surface MountYES
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Published 2009
Part StatusActive
Number of Terminations 3
Terminal Position SINGLE
Terminal FormFLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count3
Reference Standard IEC-60134
JESD-30 Code R-PSSO-F3
Number of Elements 1
Configuration SINGLE
Case Connection COLLECTOR
Transistor Application SWITCHING
Polarity/Channel Type PNP
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 100mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 60V
Current - Collector (Ic) (Max) 1A
Transition Frequency 100MHz
Frequency - Transition 100MHz
RoHS StatusROHS3 Compliant
In-Stock:30753 items

Pricing & Ordering

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BSR30F Product Details

BSR30F Overview


In this device, the DC current gain is 40 @ 100mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 50mA, 500mA.Parts of this part have transition frequencies of 100MHz.There is a 60V maximal voltage in the device due to collector-emitter breakdown.

BSR30F Features


the DC current gain for this device is 40 @ 100mA 5V
the vce saturation(Max) is 500mV @ 50mA, 500mA
a transition frequency of 100MHz

BSR30F Applications


There are a lot of Nexperia USA Inc. BSR30F applications of single BJT transistors.

  • Interface
  • Muting
  • Inverter
  • Driver

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