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BD534K

BD534K

BD534K

ON Semiconductor

BD534K datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

BD534K Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220-3
Operating Temperature150°C TJ
PackagingBulk
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number BD534
Power - Max 50W
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 2A 2V
Current - Collector Cutoff (Max) 100μA
Vce Saturation (Max) @ Ib, Ic 800mV @ 600mA, 6A
Voltage - Collector Emitter Breakdown (Max) 45V
Current - Collector (Ic) (Max) 8A
Frequency - Transition 12MHz
In-Stock:2499 items

BD534K Product Details

BD534K Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 40 @ 2A 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 800mV @ 600mA, 6A.Supplier device package TO-220-3 comes with the product.Single BJT transistor shows a 45V maximal voltage - Collector EmSingle BJT transistorter Breakdown.

BD534K Features


the DC current gain for this device is 40 @ 2A 2V
the vce saturation(Max) is 800mV @ 600mA, 6A
the supplier device package of TO-220-3

BD534K Applications


There are a lot of ON Semiconductor BD534K applications of single BJT transistors.

  • Inverter
  • Driver
  • Muting
  • Interface

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