BC856BWT1G Overview
This device has a DC current gain of 220 @ 2mA 5V, which is the ratio between the base current and the collector current.As it features a collector emitter saturation voltage of -650mV, it allows for maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 650mV @ 5mA, 100mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -100mA.There is a transition frequency of 100MHz in the part.Single BJT transistor can take a breakdown input voltage of 65V volts.Collector current can be as low as 100mA volts at its maximum.
BC856BWT1G Features
the DC current gain for this device is 220 @ 2mA 5V
a collector emitter saturation voltage of -650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
a transition frequency of 100MHz
BC856BWT1G Applications
There are a lot of ON Semiconductor BC856BWT1G applications of single BJT transistors.
- Driver
- Inverter
- Muting
- Interface
