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TTA1713-Y,LF

TTA1713-Y,LF

TTA1713-Y,LF

Toshiba Semiconductor and Storage

TTA1713-Y,LF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Toshiba Semiconductor and Storage stock available on our website

SOT-23

TTA1713-Y,LF Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 200mW
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 100mA 1V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 400mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 45V
Current - Collector (Ic) (Max) 500mA
Frequency - Transition 80MHz
RoHS StatusNon-RoHS Compliant
In-Stock:19557 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.183937$0.183937
10$0.173525$1.73525
100$0.163703$16.3703
500$0.154437$77.2185
1000$0.145695$145.695

TTA1713-Y,LF Product Details

TTA1713-Y,LF Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 120 @ 100mA 1V.A VCE saturation (Max) of 400mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).Collector Emitter Breakdown occurs at 45VV - Maximum voltage.

TTA1713-Y,LF Features


the DC current gain for this device is 120 @ 100mA 1V
the vce saturation(Max) is 400mV @ 50mA, 500mA

TTA1713-Y,LF Applications


There are a lot of Toshiba Semiconductor and Storage TTA1713-Y,LF applications of single BJT transistors.

  • Interface
  • Driver
  • Inverter
  • Muting

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